Inductively Coupled Plasma Etcher System (PP133ICP380 batch type)

Key system features and benefits include:

  • Actively cooled electrode to maintain sample temperature during etch process
  • High power ICP source producing high density plasmas
  • Magnetic spacer for enhanced ion control and uniformity
  • High conductance pumping system
  • Reliable hardware and ease of serviceability for excellent uptime

    ICP etching of the following materials can be acheived using the PlasmaPro 133 Cobra380 system:

  • Compound Semiconductors
  • Dielectrics
  • Metals


System features of the PlasmaPro 133 Cobra380 ICP etch system

  • Options of a 8- or 12-line gas pod provide flexibility in processes and process gases
  • Gas pod may be remotely sited in the service area, away from the main process tool
  • Cassette-to-cassette handling with full wafer tracking and individual wafer process control where required
  • Hexagonal or square robotic handlers, with MESC compatibility
  • Can be integrated into a cluster system with central robotic wafer handler and full cassette-to-cassette wafer handling for production processes
  • Endpoint detection by laser interferometry and/or optical emission spectroscopy can be fitted to the PlasmaPro 133 to enhance etch control
  • Up to 200mm pumping port for high gas conductance – aiding chamber cleanliness
  • Electrodes available for temperatures from -120ºC to +350ºC
  • Optional helium backside cooling, with mechanical clamping
  • Optional electrostatic shielding delivers reduced ion damage and reduced capacitive coupling
  • Optional chamber wall heating and liners reduce cleaning requirements, and increases uptime
  • ICP accelerator rate enhancement technology