Monolayer Graphene on Cu (4 Inches) 石墨烯CVD薄膜
Monolayer Graphene on SiO2/Si (10mm x 10mm) - Pack 4 units 單層石墨烯CVD薄膜
本產品包含單層石墨烯薄膜和4吋銅箔基板
 
石墨烯薄膜
 • Growth Method: CVD synthesis
 • Appearance (Color): Transparent
 • Transparency  > 97%
 • Appearance (Form): Film
 • Coverage  > 95%
 • Number of graphene layers: 1
 • Thickness (theoretical)  0.345 nm
 • FET mobility on Al₂O₃: 2000 cm2/Vs
 • Hall mobility on SiO₂/Si: 4000 cm2/Vs
 • Sheet Resistance: 450±40 Ohms/sq (1cm x 1cm)
 • Grain size: Up to 10 μm
 
銅箔基板
 • Thickness: 18 µm
 
應用
 • 可撓式電池、電子、航太工業、MEMS、NEMS、微型驅動器、導電鍍膜、學術研究等